The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2015
Filed:
Mar. 23, 2012
Richard M. Swanson, Los Altos, CA (US);
Marius M. Bunea, Santa Clara, CA (US);
Michael C. Johnson, Alameda, CA (US);
David D. Smith, Campbell, CA (US);
Yu-chen Shen, Sunnyvale, CA (US);
Peter J. Cousins, Menlo Park, CA (US);
Tim Dennis, Canton, TX (US);
Richard M. Swanson, Los Altos, CA (US);
Marius M. Bunea, Santa Clara, CA (US);
Michael C. Johnson, Alameda, CA (US);
David D. Smith, Campbell, CA (US);
Yu-Chen Shen, Sunnyvale, CA (US);
Peter J. Cousins, Menlo Park, CA (US);
Tim Dennis, Canton, TX (US);
SunPower Corporation, San Jose, CA (US);
Abstract
Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.