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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9054249 B1

PDFFull Text
Date of Patent:
Jun. 09, 2015

Filed:

May. 05, 2010

Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon

Applicants:

Karin Chaudhari, Briarcliff Manor, NY (US);

Ashok Chaudhari, Briarcliff Manor, NY (US);

Pia Chaudhari, Briarcliff Manor, NY (US);

Inventor:

Praveen Chaudhari, Briarcliff Manor, NY (US);

Assignee:

Solar—Tectic LLC, Briarcliff Manor, NY (US);

Attorneys:

Keith D. Nowak

Libby Babu Varghese

Carter Ledyard & Milburn LLP

Primary Examiner:

Matthew Song

Int. Cl.
CPC ...
C30B 25/02 (2006.01); H01L 31/0392 (2006.01); C30B 11/12 (2006.01); H01L 21/02 (2006.01); C03C 17/36 (2006.01); C23C 14/02 (2006.01); C23C 14/18 (2006.01); C23C 14/58 (2006.01); H01L 31/0236 (2006.01); H01L 31/028 (2006.01); H01L 31/0352 (2006.01); H01L 31/068 (2012.01);
U.S. Cl.
CPC ...
H01L 31/0392 (2013.01); Y10T 428/24421 (2015.01); Y10T 428/24372 (2015.01); C30B 25/02 (2013.01); C30B 11/12 (2013.01); H01L 21/02653 (2013.01); C03C 17/3618 (2013.01); C03C 17/3636 (2013.01); C03C 17/3649 (2013.01); C03C 17/3668 (2013.01); C03C 17/3678 (2013.01); C03C 2218/15 (2013.01); C23C 14/025 (2013.01); C23C 14/18 (2013.01); C23C 14/5873 (2013.01); H01L 31/0236 (2013.01); H01L 31/028 (2013.01); H01L 31/035281 (2013.01); H01L 31/068 (2013.01); Y02E 10/50 (2013.01);
Abstract

A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies.

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