The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2015
Filed:
Feb. 28, 2013
Koninklijke Philips N.v., Eindhoven, NL;
Theodore Chung, Eindhoven, NL;
Koninklijke Philips N.V., Eindhoven, NL;
Abstract
A method for fabricating an epitaxial structure includes providing a substrate () and a heterojunction stack on a first side the substrate, and forming a GaN light emitting diode stack () on a second side of the substrate. The heterojunction stack includes an undoped gallium nitride (GaN) layer and a doped aluminum gallium nitride (AIGaN) layer on the undoped GaN layer. The GaN light emitting diode stack () includes an n-type GaN layer () over the substrate, a GaN/indium gallium nitride (InGaN) multiple quantum well (MQW) structure () over the n-type GaN layer, a p-type AIGaN layer () over the n-type GaN/InGaN MQW structure, and a p-type GaN layer () over the p-type AIGaN layer.