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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9054227 B1

PDFFull Text
Expired
Date of Patent:
Jun. 09, 2015

Filed:

Aug. 29, 2014

Micro electro mechanical system, semiconductor device, and manufacturing method thereof

Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Inventors:

Mayumi Yamaguchi, Kanagawa, JP;

Konami Izumi, Kanagawa, JP;

Fuminori Tateishi, Kanagawa, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;

Attorney:

Fish & Richardon P.C.

Primary Examiner:

Calvin Choi

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/30 (2006.01); H01L 21/46 (2006.01); H01L 23/00 (2006.01); A61B 5/00 (2006.01); B60C 23/04 (2006.01); B81C 1/00 (2006.01); G01L 1/16 (2006.01); G01L 17/00 (2006.01); H01L 27/20 (2006.01); H01L 41/311 (2013.01); H01L 41/313 (2013.01); H01L 21/02 (2006.01); H01L 21/54 (2006.01); H01L 35/34 (2006.01); H01L 41/25 (2013.01); A61B 5/024 (2006.01);
U.S. Cl.
CPC ...
H01L 24/93 (2013.01); Y10T 29/42 (2015.01); A61B 5/02444 (2013.01); A61B 5/681 (2013.01); B60C 23/0408 (2013.01); B60C 23/0411 (2013.01); B60C 23/0413 (2013.01); B81C 1/0023 (2013.01); G01L 1/16 (2013.01); G01L 17/00 (2013.01); H01L 27/20 (2013.01); H01L 41/311 (2013.01); H01L 41/313 (2013.01); H01L 2924/0002 (2013.01); H01L 21/02118 (2013.01); H01L 21/02175 (2013.01); H01L 21/02183 (2013.01); H01L 21/02186 (2013.01); H01L 21/02189 (2013.01); H01L 21/54 (2013.01); H01L 35/34 (2013.01); H01L 41/25 (2013.01); H01L 2924/1461 (2013.01); H01L 2924/13091 (2013.01);
Abstract

The present invention provides a MEMS and a sensor having the MEMS which can be formed without a process of etching a sacrifice layer. The MEMS and the sensor having the MEMS are formed by forming an interspace using a spacer layer. In the MEMS in which an interspace is formed using a spacer layer, a process for forming a sacrifice layer and an etching process of the sacrifice layer are not required. As a result, there is no restriction on the etching time, and thus the yield can be improved.

Find Patent Forward Citations

Yamaguchi, Mayumi. (2015). Micro electro mechanical system, semiconductor device, and manufacturing method thereof (U.S. Patent No. 9054227). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9054227

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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