The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2015
Filed:
Aug. 01, 2008
Shunpei Yamazaki, Setagaya, JP;
Sachiaki Teduka, Atsugi, JP;
Satoshi Toriumi, Ebina, JP;
Makoto Foruno, Atsugi, JP;
Yasuhiro Jinbo, Atsugi, JP;
Koji Dairiki, Atsugi, JP;
Hideaki Kuwabara, Isehara, JP;
Shunpei Yamazaki, Setagaya, JP;
Sachiaki Teduka, Atsugi, JP;
Satoshi Toriumi, Ebina, JP;
Makoto Foruno, Atsugi, JP;
Yasuhiro Jinbo, Atsugi, JP;
Koji Dairiki, Atsugi, JP;
Hideaki Kuwabara, Isehara, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
After a gate insulating film is formed over a gate electrode, in order to improve the quality of a microcrystalline semiconductor film which is formed in an early stage of deposition, a film near an interface with the gate insulating film is formed under a first deposition condition in which a deposition rate is low but the quality of a film to be formed is high, and then, a film is further deposited under a second deposition condition in which a deposition rate is high. Then, a buffer layer is formed to be in contact with the microcrystalline semiconductor film. Further, plasma treatment with a rare gas such as argon or hydrogen plasma treatment is performed before formation of the film under the first deposition condition for removing adsorbed water on a substrate.