The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2015
Filed:
Jan. 10, 2013
Applicant:
Sony Corporation, Tokyo, JP;
Inventors:
Yoshihiro Oshima, Kanagawa, JP;
Takashige Fujimori, Kanagawa, JP;
Yasunobu Hiromasu, Kanagawa, JP;
Yasuhiro Terai, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/12 (2006.01); H01L 27/12 (2006.01); H01L 21/84 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78693 (2013.01); H01L 29/66742 (2013.01); H01L 29/78606 (2013.01); H01L 29/78633 (2013.01); H01L 29/7869 (2013.01); H01L 29/66969 (2013.01);
Abstract
There are provided a thin-film transistor suppressing influence of light and having stable characteristics, and a method of manufacturing the thin-film transistor, as well as a display unit and an electronic apparatus. The thin-film transistor includes: a gate electrode; an oxide semiconductor film having a channel region that faces the gate electrode; and a protective film covering at least the channel region and containing an aluminum lower oxide (AlO, where 0<Y/X<3/2) that absorbs light.