The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2015

Filed:

Jan. 22, 2013
Applicant:

Sony Corporation, Tokyo, JP;

Inventors:

Kazuhiko Tokunaga, Kanagawa, JP;

Toshiaki Arai, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78636 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01);
Abstract

A thin-film transistor includes: a gate electrode; a gate insulating film disposed on the gate electrode; an oxide semiconductor layer disposed on the gate insulating film and having a channel region located to face the gate electrode; a channel protective layer disposed on the gate insulating film and the oxide semiconductor layer; and source and drain electrodes each connected to the oxide semiconductor layer through a connection hole formed in the channel protective layer, in which the oxide semiconductor layer has, in a part of the channel region, a narrow region with a narrower width than a width of the connection hole.


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