The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2015
Filed:
May. 01, 2012
Masayuki Itose, Sodegaura, JP;
Mami Nishimura, Sodegaura, JP;
Hirokazu Kawashima, Sodegaura, JP;
Misa Sunagawa, Sodegaura, JP;
Masashi Kasami, Sodegaura, JP;
Koki Yano, Sodegaura, JP;
Masayuki Itose, Sodegaura, JP;
Mami Nishimura, Sodegaura, JP;
Hirokazu Kawashima, Sodegaura, JP;
Misa Sunagawa, Sodegaura, JP;
Masashi Kasami, Sodegaura, JP;
Koki Yano, Sodegaura, JP;
IDEMITSU KOSAN CO., LTD., Tokyo, JP;
Abstract
A thin film transistor including an active layer, and has a field-effect mobility of 25 cm/Vs or more, the active layer being formed of an oxide that includes In, Ga, and Zn in an atomic ratio that falls within the following region 1, region 2, or region 3, the region 1 being defined by 0.58≦In/(In+Ga+Zn)≦0.68 and 0.15<Ga/(In+Ga+Zn)≦0.29, the region 2 being defined by 0.45≦In/(In+Ga+Zn)<0.58 and 0.09≦Ga/(In+Ga+Zn)<0.20, and the region 3 being defined by 0.45≦In/(In+Ga+Zn)<0.58 and 0.20≦Ga/(In+Ga+Zn)≦0.27.