The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9054184 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 09, 2015

Filed:

Feb. 18, 2014
Applicant:

Ps4 Luxco S.a.r.l., Luxembourg, LU;

Inventor:

Noriaki Mikasa, Tokyo, JP;

Assignee:

PS4 LUXCO S.A.R.L., Luxembourg, LU;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 27/10814 (2013.01); H01L 27/10823 (2013.01); H01L 27/10855 (2013.01); H01L 27/10876 (2013.01); H01L 27/10891 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate having a first gate groove having first and second side walls facing to each other. A first gate insulating film covers the first and second side walls. A first gate electrode is disposed on the first gate insulating film and in a lower portion of the first gate groove. A first burying insulating film buries the first gate groove and covers the first gate electrode. A first diffusion region is adjacent to a first upper portion of the first gate insulating film. The first upper portion is positioned on an upper portion of the first side wall of the first gate groove. A second diffusion region is in contact with an upper portion of the second side wall of the first gate groove.


Find Patent Forward Citations

Mikasa, Noriaki. (2015). Semiconductor device and method of forming the same (U.S. Patent No. 9054184). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9054184

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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