The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2015

Filed:

Aug. 01, 2014
Applicant:

Fuji Electric Co., Ltd., Kawasaki-shi, JP;

Inventors:

Yuichi Onozawa, Matsumoto, JP;

Hidenori Takahashi, Matsumoto, JP;

Takashi Yoshimura, Matsumoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/417 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7397 (2013.01); H01L 29/4236 (2013.01); H01L 29/4238 (2013.01); H01L 29/66348 (2013.01); H01L 29/1095 (2013.01); H01L 29/41708 (2013.01); H01L 29/42304 (2013.01); H01L 29/4916 (2013.01);
Abstract

A semiconductor device includes a first gate electrode that is provided on a first insulating film along one side wall of a first trench and is provided in a second trench, a shield electrode that is provided on a second insulating film along the other side wall of the first trench and is provided in a third trench, a gate runner that is an extended portion of the second trench, has a portion which is provided on the first gate electrode, and is connected to the first gate electrode, and an emitter polysilicon layer that is an extended portion of the third trench, has a portion which is provided on the shield electrode, and is connected to the shield electrode. The semiconductor device has improved turn-on characteristics with a slight increase in the number of process steps, while preventing increase in costs and reduction in yield.


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