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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9054048 B1

PDFFull Text
Date of Patent:
Jun. 09, 2015

Filed:

Jul. 05, 2012

Nh3 containing plasma nitridation of a layer on a substrate

Applicants:

Wei Liu, San Jose, CA (US);

Malcolm J. Bevan, Santa Clara, CA (US);

Christopher S. Olsen, Fremont, CA (US);

Johanes Swenberg, Los Gatos, CA (US);

Inventors:

Wei Liu, San Jose, CA (US);

Malcolm J. Bevan, Santa Clara, CA (US);

Christopher S. Olsen, Fremont, CA (US);

Johanes Swenberg, Los Gatos, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorneys:

Moser Taboada

Alan Taboada

Primary Examiner:

Mary Wilczewski

Assistant Examiner:

Erik T Peterson

Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/469 (2006.01); H01L 21/3105 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3105 (2013.01); H01L 21/02148 (2013.01); H01L 21/02164 (2013.01); H01L 21/02181 (2013.01); H01L 21/02332 (2013.01); H01L 21/0234 (2013.01);
Abstract

Methods and apparatus for forming nitrogen-containing layers are provided herein. In some embodiments, a method includes exposing a first layer of a substrate to a plasma formed from a process gas comprising predominantly a mixture of ammonia (NH) and a noble gas, wherein ammonia is about 0.5 to about 15 percent of the process gas; and maintaining the process chamber at a pressure of about 10 mTorr to about 80 mTorr while exposing the first layer to the plasma to transform at least an upper portion of the first layer into a nitrogen-containing layer.

Find Patent Forward Citations

Liu, Wei. (2015). Nh3 containing plasma nitridation of a layer on a substrate (U.S. Patent No. 9054048). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9054048

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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