The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2015

Filed:

Oct. 21, 2013
Applicant:

Olympus Corporation, Tokyo, JP;

Inventor:

Mitsuhiro Tsukimura, Tokyo, JP;

Assignee:

OLYMPUS CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 25/00 (2006.01); H01L 21/66 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14636 (2013.01); H01L 22/14 (2013.01); H01L 25/00 (2013.01); H01L 27/14634 (2013.01); H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 24/94 (2013.01); H01L 25/0657 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/08146 (2013.01); H01L 2224/94 (2013.01); H01L 2225/06596 (2013.01); H01L 2225/06541 (2013.01); H01L 27/14618 (2013.01); H01L 22/20 (2013.01); H01L 22/32 (2013.01); H01L 2224/02166 (2013.01); H01L 2224/05554 (2013.01);
Abstract

A semiconductor device includes a first semiconductor substrate and a second semiconductor substrate. The first semiconductor substrate and the second semiconductor substrate are electrically connected to each other in a state in which a first connection surface of the first semiconductor substrate and a second connection surface of the second semiconductor substrate face each other. A concave portion is formed in at least one of the first connection surface and the second connection surface. An electrode, which is electrically connected to a portion of wirings included in a wiring layer provided in the first semiconductor substrate or the second semiconductor substrate in which the concave portion is formed and is capable of being electrically connected to an outside, is formed in an inside of the concave portion.


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