The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2015
Filed:
Jun. 21, 2012
Applicants:
Jeong-keun Ahn, Yongin, KR;
Wang-jo Lee, Yongin, KR;
Inventors:
Jeong-Keun Ahn, Yongin, KR;
Wang-Jo Lee, Yongin, KR;
Assignee:
SAMSUNG DISPLAY CO., LTD., Yongin, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/12 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1255 (2013.01);
Abstract
A semiconductor device includes a semiconductor layer on a substrate, a gate electrode electrically insulated from the semiconductor layer by a gate insulating layer, an insulating layer on the gate insulating layer and on the gate electrode, and a source electrode and a drain electrode on the insulating layer, the source and drain electrode being connected to the semiconductor layer. The source electrode overlaps at least a part of the gate electrode. The source electrode, the insulating layer, and the gate electrode overlap each other so as to provide a capacitor.