The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2015
Filed:
May. 09, 2014
Sony Corporation, Tokyo, JP;
Yuichi Kato, Kanagawa, JP;
SONY CORPORATION, Tokyo, JP;
Abstract
Provided is a thin-film transistor that includes: a substrate; a first barrier film formed on the substrate; a second barrier film formed in a selective region on the first barrier film, and having a barrier property against hydrogen; an oxide semiconductor layer including a first part formed on the second barrier film and a second part formed on the first barrier film, in which the first part functions as an active layer, and the second part has lower electrical resistance than the first part; a gate electrode formed on the first part of the oxide semiconductor layer with a gate insulating film therebetween; and a source electrode or drain electrode electrically connected to the second part of the oxide semiconductor layer. The first barrier film has a barrier property against an impurity from the substrate and a property of chemically reducing the oxide semiconductor layer.