The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2015

Filed:

Jun. 01, 2009
Applicants:

Michael A. Haase, St. Paul, MN (US);

Jun-ying Zhang, Woodbury, MN (US);

Thomas J. Miller, Woodbury, MN (US);

Inventors:

Michael A. Haase, St. Paul, MN (US);

Jun-Ying Zhang, Woodbury, MN (US);

Thomas J. Miller, Woodbury, MN (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 31/00 (2006.01); H01L 25/075 (2006.01); H01L 27/146 (2006.01); H01L 31/101 (2006.01); H01L 33/44 (2010.01); H01L 33/50 (2010.01); H01L 51/50 (2006.01); H01L 51/52 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0756 (2013.01); H01L 27/14609 (2013.01); H01L 31/1013 (2013.01); H01L 27/14603 (2013.01); H01L 33/44 (2013.01); H01L 33/50 (2013.01); H01L 51/5036 (2013.01); H01L 51/5262 (2013.01); H01L 2924/09701 (2013.01); H01L 2933/0091 (2013.01);
Abstract

Semiconductor light converting constructions are disclosed. The semiconductor light converting construction includes a first semiconductor layer for absorbing at least a portion of light at a first wavelength; a semiconductor potential well for converting at least a portion of the light absorbed at the first wavelength to light at a longer second wavelength; and a second semiconductor layer that is capable of absorbing at least a portion of light at the first wavelength. The first semiconductor layer has a maximum first index of refraction at the second wavelength. The second semiconductor layer has a second index of refraction at the second wavelength that is greater than the maximum first index of refraction.


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