The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2015
Filed:
Feb. 20, 2013
Jx Nippon Mining & Metals Corporation, Tokyo, JP;
Hiroshi Takamura, Ibaraki, JP;
Ryo Suzuki, Ibaraki, JP;
JX Nippon Mining & Metals Corporation, Tokyo, JP;
Abstract
A polycrystalline silicon wafer produced based on a melting method and having an outer diameter of 450 mm or more, wherein a depth of scratches on the polycrystalline silicon wafer is 10 μm or less. A polycrystalline silicon wafer produced based on a melting method and having an outer diameter of 450 mm or more, wherein a maximum number of scratches having a width of 40 μm or more and 100 μm or less and a depth of more than 10 μm and 40 μm or less formed on the polycrystalline silicon wafer is one or less per section when the overall polycrystalline silicon wafer is divided into 100 mm-square sections, and a depth of remaining scratches is 10 μm or less. Provided is a large polycrystalline silicon wafer, particularly a silicon wafer having a wafer size in which the outer diameter is 450 mm or more, in which a small number of scratches are generated on the wafer surface and which has mechanical properties similar to those of a monocrystalline silicon wafer.