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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9053937 B1

PDFFull Text
Date of Patent:
Jun. 09, 2015

Filed:

Apr. 14, 2011

Semiconductor device and method of manufacturing the same

Applicants:

Sang Hee Park, Daejeon, KR;

Chi Sun Hwang, Daejeon, KR;

Chun Won Byun, Daejeon, KR;

Elvira M. C. Fortunato, Caparica, PT;

Rodrigo F. P. Martins, Caparica, PT;

Ana R. X. Barros, Caparica, PT;

Nuno F. O. Correia, Caparica, PT;

Pedro M. C. Barquinha, Caparica, PT;

Vitor M. L. Figueiredo, Caparica, PT;

Inventors:

Sang Hee Park, Daejeon, KR;

Chi Sun Hwang, Daejeon, KR;

Chun Won Byun, Daejeon, KR;

Elvira M. C. Fortunato, Caparica, PT;

Rodrigo F. P. Martins, Caparica, PT;

Ana R. X. Barros, Caparica, PT;

Nuno F. O. Correia, Caparica, PT;

Pedro M. C. Barquinha, Caparica, PT;

Vitor M. L. Figueiredo, Caparica, PT;

Assignees:

ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE, Daejeon, KR;

FACULTY OF SCIENCE AND TECHNOLOGY NEW UNIVERSITY OF LISBON, Caparica, PT;

Attorney:

Rabin & Berdo, P.C.

Primary Examiner:

Marc Armand

Int. Cl.
CPC ...
H01L 29/22 (2006.01); H01L 21/02 (2006.01); C23C 14/08 (2006.01); H01L 27/12 (2006.01); H01L 29/49 (2006.01); H01L 29/786 (2006.01); H01L 29/94 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02565 (2013.01); C23C 14/08 (2013.01); C23C 14/086 (2013.01); C23C 14/087 (2013.01); H01L 21/02422 (2013.01); H01L 21/02579 (2013.01); H01L 21/02617 (2013.01); H01L 21/02628 (2013.01); H01L 21/02631 (2013.01); H01L 21/823857 (2013.01); H01L 27/092 (2013.01); H01L 27/1203 (2013.01); H01L 29/4908 (2013.01); H01L 29/7869 (2013.01); H01L 29/94 (2013.01); H01L 29/66969 (2013.01);
Abstract

Provided is a semiconductor device using a p-type oxide semiconductor layer and a method of manufacturing the same. The device includes the p-type oxide layer formed of at least one oxide selected from the group consisting of a copper(Cu)-containing copper monoxide, a tin(Sn)-containing tin monoxide, a copper tin oxide containing a Cu—Sn alloy, and a nickel tin oxide containing a Ni—Sn alloy. Thus, transparent or opaque devices are easily developed using the p-type oxide layer. Since an oxide layer that is formed using a low-temperature process is applied to a semiconductor device, the manufacturing process of the semiconductor device is simplified and manufacturing costs may be reduced.

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