The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2015
Filed:
May. 19, 2011
Michael A. Huff, Oakton, VA (US);
Paul Sunal, Alexandria, VA (US);
Michael A. Huff, Oakton, VA (US);
Paul Sunal, Alexandria, VA (US);
Corporation For National Research Initiatives, Reston, VA (US);
Abstract
A method and system are disclosed for controlling the state of stress in deposited thin films on microelectronics wafers for the integration of MEMS and NEMS devices with microelectronics. According to the method and system, various process parameters including: process pressure; substrate temperature; deposition rate; and ion-beam energies (controlled via the ion beam current, voltage, signal frequency and duty cycle) are varied using a step-by-step methodology to arrive at a pre-determined desired state of stress in thin films deposited using PVD at low temperatures and desired stress states onto wafers or substrates having microelectronics processing performed on them.