The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2015

Filed:

Oct. 26, 2012
Applicant:

Dong-su Lee, Hwaseong-si, KR;

Inventor:

Dong-Su Lee, Hwaseong-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 11/4076 (2006.01); G05F 1/56 (2006.01); G11C 11/4074 (2006.01); H02M 3/07 (2006.01); G11C 11/4099 (2006.01); G11C 5/14 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4076 (2013.01); G05F 1/56 (2013.01); G11C 11/4074 (2013.01); H02M 3/07 (2013.01); G11C 11/4099 (2013.01); G11C 2207/2272 (2013.01); G11C 5/145 (2013.01); G11C 5/147 (2013.01);
Abstract

Voltage generators may generate a level of a high target voltage with respect to a low external power supply voltage. A reference voltage generator includes a clamp regulator which is driven by a first power supply voltage supplied from an external source and receives a first voltage to generate a clamp voltage, and a level amplifier which is driven by a second power supply voltage that is higher than the first power supply voltage and receives the clamp voltage to generate a reference voltage. The clamp voltage may be set to have a voltage level which results in a successful restore operation with respect to a memory cell array in a dynamic random access memory (DRAM).


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