The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2015
Filed:
Sep. 13, 2013
Applicant:
Lite-on Technology Corporation, Taipei, TW;
Inventors:
Assignee:
LITE-ON TECHNOLOGY CORPORATION, Taipei, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G11C 16/34 (2006.01); G11C 11/56 (2006.01); G11C 16/30 (2006.01); G11C 5/14 (2006.01); G11C 7/08 (2006.01); G11C 7/24 (2006.01); G11C 11/4074 (2006.01); G11C 7/10 (2006.01); G11C 29/02 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 2211/5641 (2013.01); G11C 11/5628 (2013.01); G11C 7/1006 (2013.01); G11C 5/147 (2013.01); G11C 29/028 (2013.01);
Abstract
A solid state drive and its associated data storage method are provided. The data storage method comprising steps of: receiving data-for-writing from a host, and transforming the data-for-writing to data-for-storage; comparing a supply voltage and a predetermined voltage; and when the supply voltage is lower than the predetermined voltage, proceeding a strong-page programming procedure for storing the data-for-storage to a blank area of a multi-level cell flash memory.