The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2015
Filed:
Mar. 27, 2013
Applicant:
Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;
Inventors:
Kazuhiko Shimakawa, Osaka, JP;
Ryotaro Azuma, Osaka, JP;
Yoshikazu Katoh, Osaka, JP;
Akifumi Kawahara, Kyoto, JP;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 13/0007 (2013.01); G11C 13/0038 (2013.01); G11C 13/0069 (2013.01); G11C 2013/0083 (2013.01); G11C 2213/15 (2013.01); G11C 2013/0078 (2013.01);
Abstract
The nonvolatile memory device includes a control circuit that controls a sense amplification circuit and a writing circuit. The control circuit changes a value of at least one of (a) a load current and (b) a forming pulse current or a forming pulse voltage, according to a total number of sneak current paths formed by memory cells each including a variable resistance element in a second resistance state having a low resistance value except a selected memory cell in a memory cell array.