The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2015

Filed:

Jun. 14, 2012
Applicants:

Yoann Guillemenet, Crest, FR;

Lionel Torres, Combaillaux, FR;

Inventors:

Yoann Guillemenet, Crest, FR;

Lionel Torres, Combaillaux, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 13/00 (2006.01); G11C 14/00 (2006.01); G11C 11/16 (2006.01); H03K 19/177 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0002 (2013.01); G11C 14/00 (2013.01); G11C 11/161 (2013.01); G11C 14/0054 (2013.01); G11C 14/0081 (2013.01); H03K 19/177 (2013.01);
Abstract

The invention concerns a memory device comprising at least one memory cell comprising: first and second pairs of cross-coupled transistors; and a first resistance switching element () coupled between a first supply voltage (VDD, GND) and a first transistor of said first pair of transistors and programmed to have one of first and second resistances; and control circuitry adapted to store a data value (D) at said first and second storage nodes by coupling said first storage node to said second supply voltage (V, GND), the data value being determined by the programmed resistance of the first resistance switching element.


Find Patent Forward Citations

Loading…