The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2015

Filed:

Jun. 18, 2013
Applicants:

Stmicroelectronics S.a., Montrouge, FR;

Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;

Inventors:

Michel Marty, Saint Paul de Varces, FR;

Flavien Hirigoyen, Grenoble, FR;

Josep Segura Puchades, Fontaine, FR;

Hélène Wehbe-Alause, Grenoble, FR;

Umberto Rossini, Coublevie, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/36 (2010.01); G02F 1/1368 (2006.01); G02F 1/1362 (2006.01);
U.S. Cl.
CPC ...
G02F 1/1368 (2013.01); H01L 33/36 (2013.01); G02F 1/136209 (2013.01); G02F 1/136213 (2013.01); G02F 1/136277 (2013.01); G02F 2001/136281 (2013.01);
Abstract

A nanoprojector panel formed of an array of cells, each cell including a liquid crystal layer between upper and lower transparent electrodes, a MOS control transistor being arranged above the upper electrode, each transistor being covered with at least three metallization levels. The transistor of each cell extends in a corner of the cell so that the transistors of an assembly of four adjacent cells are arranged in a central region of the assembly. The upper metallization level extends above the transistors of each the assembly of four adjacent cells. The panel includes, for each assembly of four adjacent cells, a first conductive ring surrounding the transistors, the first ring extending from the lower metallization level to the upper electrode of each cell, with an interposed insulating material.


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