The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2015

Filed:

Nov. 24, 2013
Applicant:

Hitachi, Ltd., Chiyoda-ku, Tokyo, JP;

Inventors:

Misuzu Sagawa, Tokyo, JP;

Katsuya Oda, Tokyo, JP;

Kazuki Tani, Tokyo, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 3/04 (2006.01); G02B 6/122 (2006.01); G02B 6/13 (2006.01); H01S 5/026 (2006.01); H01S 5/14 (2006.01); H01S 5/02 (2006.01); H01S 5/10 (2006.01);
U.S. Cl.
CPC ...
G02B 6/1223 (2013.01); G02B 6/131 (2013.01); H01S 5/021 (2013.01); H01S 5/026 (2013.01); H01S 5/1014 (2013.01); H01S 5/1032 (2013.01); H01S 5/141 (2013.01);
Abstract

The light emitting device includes an active layer formed on a semiconductor substrate for emitting light, a semiconductor layer of a first conductivity type electrically connected to one end of the active layer, a semiconductor layer of a second conductivity type electrically connected to the other end of the active layer, first and second electrodes, a feedback mechanism for laser oscillation, and a waveguide for guiding the light emitted from the active layer, in which the active layer is made of a semiconductor having an affinity with a silicon CMOS process, and the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type, and the waveguide are each made of silicon as a part of the semiconductor substrate.


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