The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2015

Filed:

Nov. 28, 2011
Applicants:

Kyung-wook Lee, Ansan-si, KR;

Kyung-yul Lee, Bucheon-si, KR;

Bong-yul Lee, Gunpo-si, KR;

Wayne H. Choe, Champaign, IL (US);

Inventors:

Kyung-Wook Lee, Ansan-si, KR;

Kyung-Yul Lee, Bucheon-si, KR;

Bong-Yul Lee, Gunpo-si, KR;

Wayne H. Choe, Champaign, IL (US);

Assignee:

SAMWON FA CO., LTD., Busan, KR;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/00 (2006.01); G02B 1/00 (2006.01); G02B 5/22 (2006.01); G02B 5/26 (2006.01); H01L 31/0687 (2012.01); H01L 31/043 (2014.01); H01L 31/056 (2014.01);
U.S. Cl.
CPC ...
G02B 1/005 (2013.01); G02B 5/22 (2013.01); G02B 5/26 (2013.01); H01L 31/0687 (2013.01); Y02E 10/52 (2013.01); Y02E 10/544 (2013.01); H01L 31/043 (2014.12); H01L 31/056 (2014.12);
Abstract

A silicon solar cell is provided, including a first silicon layer that absorbing sunlight, a first layer of a structure of photonic crystals formed on the first silicon layer, and a second silicon layer formed on the first layer of a structure of photonic crystals and absorbing sunlight, wherein the first silicon layer and the second silicon layer absorb sunlight at different wavelengths and the first layer of structure of photonic crystals selectively reflects light of a wavelength absorbed by the second silicon layer.


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