The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2015
Filed:
Feb. 15, 2012
Albert M. Chu, Essex, VT (US);
Ronald A. Piro, Essex Junction, VT (US);
Daryl M. Seitzer, Essex Junction, VT (US);
Rohit Shetty, Essex Junction, VT (US);
Thomas W. Wyckoff, Jeffersonville, VT (US);
Albert M. Chu, Essex, VT (US);
Ronald A. Piro, Essex Junction, VT (US);
Daryl M. Seitzer, Essex Junction, VT (US);
Rohit Shetty, Essex Junction, VT (US);
Thomas W. Wyckoff, Jeffersonville, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor device structure is embedded within a semiconductor chip that calibrates a photon-emission luminosity scale by running multiple known currents through the device. The method comprises embedding at least one photon emission device in an integrated circuit having at least one functional device. A control current is applied to the at least one photon emission device. The photon emission intensity produced by the at least one photon emission device is captured. The current density of the at least one photon emission device is calculated. A test current is applied to the at least one functional device. The photon emission intensity produced by the at least one functional device is captured. The current density of the at least one functional device is estimated based on a comparison with the calculated current density of the at least one photon emission device.