The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2015
Filed:
Jul. 31, 2014
The University of Utah Research Foundation, Salt Lake City, UT (US);
Clayton Covey Williams, Salt Lake City, UT (US);
Jon Paul Johnson, Salt Lake City, UT (US);
The University of Utah Research Foundation, Salt Lake City, UT (US);
Abstract
A single electron tunneling force spectroscopy (SETFS) system () can perform a series of surface potential charge measurements at an array of voltages (V) and tip-sample heights (Z). These measurements are combined with a tunneling model that includes the dependence of the tunneling probability on trap state depth and energy. Simultaneous measurement of the depth and energy of individual trap states in a sample, such as a dielectric film, with an atomic scale of spatial resolution can be achieved. When combined with two-dimensional trap state imaging, such techniques provide for three-dimensional imaging of electronic defect states with atomic scale spatial resolution.