The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2015
Filed:
Nov. 28, 2011
Yasushi Urakami, Obu, JP;
Ayumu Adachi, Toyota, JP;
Itaru Gunjishima, Aichi-gun, JP;
DENSO CORPORATION, Kariya, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
Abstract
A manufacturing method of a SiC single crystal includes a first growth process and a re-growth process. In the first growth process, a first seed crystal made of SiC is used to grow a first SiC single crystal. In the re-growth process, a plurality of growth steps is performed for (n−1) times. In a k-th growth step, a k-th seed crystal is cut out from a grown (k−1)-th SiC single crystal, and the k-th seed crystal is used to grow a k-th SiC single crystal (n≧2 and 2≦k≦n). When an offset angle of a growth surface of the k-th seed crystal is defined as θ, at least in one of the plurality of growth steps, the offset angle θis smaller than the offset angle θ.