The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2015

Filed:

Feb. 27, 2014
Applicants:

Canon Kabushiki Kaisha, Tokyo, JP;

Fuji Chemical Co., Ltd., Osaka, JP;

Inventors:

Hisato Yabuta, Machida, JP;

Makoto Kubota, Yokohama, JP;

Mikio Shimada, Kawasaki, JP;

Kenji Takashima, Saitama, JP;

Fumio Uchida, Daito, JP;

Kenji Maeda, Hirakata, JP;

Chiemi Shimizu, Hirakata, JP;

Assignees:

Canon Kabushiki Kaisha, Tokyo, JP;

Fuji Chemical Co., Ltd., Osaka-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01G 29/00 (2006.01); C01G 49/02 (2006.01); C01G 49/00 (2006.01); C04B 35/26 (2006.01); H01L 41/43 (2013.01); H01L 41/187 (2006.01); B82Y 30/00 (2011.01);
U.S. Cl.
CPC ...
C01G 49/02 (2013.01); C01G 29/00 (2013.01); C01G 49/0018 (2013.01); C01P 2002/34 (2013.01); C01P 2002/60 (2013.01); C01P 2002/72 (2013.01); C01P 2002/76 (2013.01); C01P 2004/04 (2013.01); C01P 2004/10 (2013.01); C01P 2004/82 (2013.01); C01P 2006/60 (2013.01); C04B 35/26 (2013.01); C04B 2235/3298 (2013.01); C04B 2235/76 (2013.01); C04B 2235/768 (2013.01); C04B 2235/80 (2013.01); C04B 2235/85 (2013.01); H01L 41/43 (2013.01); H01L 41/1878 (2013.01); C04B 2235/5445 (2013.01); C04B 2235/5454 (2013.01); B82Y 30/00 (2013.01);
Abstract

Provided is a lead-free dielectric ceramics having a low leakage current value, and a bismuth iron oxide powder as a raw material thereof. The bismuth iron oxide powder includes at least: (A) grains including a bismuth iron oxide having a perovskite-type crystal structure; (B) grains including a bismuth iron oxide having a crystal structure classified to a space group Pbam; and (C) grains including a bismuth iron oxide or a bismuth oxide having a crystal structure that is classified to a space group I23. The dielectric ceramics are made of bismuth iron oxide in which the bismuth iron oxide crystals having the crystal structure classified to the space group Pbam are distributed at a grain boundary of crystal grains of the bismuth iron oxide crystals having the perovskite-type crystal structure.


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