The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2015

Filed:

Sep. 14, 2012
Applicants:

Yong-chul Cho, Suwon-si, KR;

Yong-tak Lee, Gwangju, KR;

Jang-woo You, Yongin-si, KR;

Byung-hoon NA, Seoul, KR;

Yong-hwa Park, Yongin-si, KR;

Chang-young Park, Yongin-si, KR;

Hee-ju Chio, Jeonju-si, KR;

Gun-wu Ju, Daegu, KR;

Inventors:

Yong-chul Cho, Suwon-si, KR;

Yong-tak Lee, Gwangju, KR;

Jang-woo You, Yongin-si, KR;

Byung-hoon Na, Seoul, KR;

Yong-hwa Park, Yongin-si, KR;

Chang-young Park, Yongin-si, KR;

Hee-ju Chio, Jeonju-si, KR;

Gun-wu Ju, Daegu, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F 1/017 (2006.01); B82Y 20/00 (2011.01); H01L 31/0352 (2006.01);
U.S. Cl.
CPC ...
B82Y 20/00 (2013.01); H01L 31/035236 (2013.01); G02F 2203/12 (2013.01); G02F 1/017 (2013.01);
Abstract

A transmissive light modulator including a first reflection layer; a first active layer, arranged on the first reflection layer and including a plurality of quantum well layers and a plurality of barrier layers; a second reflection layer arranged on the first active layer; a second active layer, arranged on the second reflection layer and including a plurality of quantum well layers and a plurality of barrier layers; and a third reflection layer arranged on the second active layer, wherein the first reflection layer and the third reflection layer are each doped with a first type dopant, and the second reflection layer is doped with a second type dopant, which is electrically opposite to the first type dopant.


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