The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2015

Filed:

Apr. 15, 2011
Applicants:

Gjermund Kittilsland, Horten, NO;

Daniel Lapadatu, Horten, NO;

Sissel Jacobsen, Horten, NO;

Trond Westgaard, Horten, NO;

Inventors:

Gjermund Kittilsland, Horten, NO;

Daniel Lapadatu, Horten, NO;

Sissel Jacobsen, Horten, NO;

Trond Westgaard, Horten, NO;

Assignee:

SensoNor AS, , NO;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B81C 1/00 (2006.01); B81B 7/00 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00269 (2013.01); B81B 2201/0235 (2013.01); B81B 2201/0242 (2013.01); B81C 2201/019 (2013.01); B81C 2201/0191 (2013.01); B81C 2203/0118 (2013.01); B81C 2203/031 (2013.01); B81C 2203/058 (2013.01); B81B 7/0032 (2013.01);
Abstract

A method for providing hermetic sealing within a silicon-insulator composite wafer for manufacturing a hermetically sealed structure, comprising the steps of: patterning a first silicon wafer to have one or more recesses that extend at least partially through the first silicon wafer; filling said recesses with an insulator material able to be anodically bonded to silicon to form a first composite wafer having a plurality of silicon-insulator interfaces and a first contacting surface consisting of insulator material; and using an anodic bonding technique on the first contacting surface and an opposing second contacting surface to create hermetic sealing between the silicon-insulator interfaces, wherein the second contacting surface consists of silicon.


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