The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2015
Filed:
Mar. 24, 2014
Corning Incorporated, Corning, NY (US);
Bruce Gardiner Aitken, Corning, NY (US);
Mark Alan Lewis, Horseheads, NY (US);
Mark Alejandro Quesada, Horseheads, NY (US);
Corning Incorporated, Corning, NY (US);
Abstract
A method for inhibiting oxygen and moisture degradation of a device and the resulting device are described herein. To inhibit the oxygen and moisture degradation of the device, a low liquidus temperature (LLT) material which typically has a low low liquidus temperature (or in specific embodiments a low glass transition temperature) is used to form a barrier layer on the device. The LLT material can be, for example, tin fluorophosphate glass, chalcogenide glass, tellurite glass and borate glass. The LLT material can be deposited onto the device by, for example, sputtering, evaporation, laser-ablation, spraying, pouring, frit-deposition, vapor-deposition, dip-coating, painting or rolling, spin-coating or any combination thereof. Defects in the LLT material from the deposition step can be removed by a consolidation step (heat treatment), to produce a pore-free, gas and moisture impenetrable protective coating on the device. Although many of the deposition methods are possible with common glasses (i.e. high melting temperature glasses like borate silicate, silica, etc.), the consolidation step is only practical with the LLT material where the consolidation temperature is sufficiently low so as to not damage the inner layers in the device.