The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2015

Filed:

Jul. 13, 2012
Applicants:

Robert Gregory Wagoner, Roanoke, VA (US);

Todd David Greenleaf, Salem, VA (US);

Alan Carroll Lovell, Roanoke, VA (US);

Inventors:

Robert Gregory Wagoner, Roanoke, VA (US);

Todd David Greenleaf, Salem, VA (US);

Alan Carroll Lovell, Roanoke, VA (US);

Assignee:

General Electric Company, Schenectady, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 17/60 (2006.01); H03K 17/16 (2006.01); H03K 17/14 (2006.01);
U.S. Cl.
CPC ...
H03K 17/168 (2013.01); H03K 17/14 (2013.01); H03K 17/166 (2013.01);
Abstract

A system for regulating semiconductor devices may include a current regulator configured to regulate one or more currents provided to an insulated gate bipolar transistor (IGBT). The current regulator may regulate the currents by generating a current profile based at least in part on a collector voltage value associated with the IGBT, a rate of collector voltage change value associated with the IGBT, or any combination thereof. The current profile may include one or more current values to be provided to a gate of the IGBT such that the current values are configured to limit the rate of collector voltage change to a first value. The current regulator may then send the one or more current values to a current source configured to supply the gate of the IGBT with one or more currents that correspond to the one or more current values.


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