The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2015
Filed:
Apr. 18, 2012
Applicants:
Christoph Eichler, Tegernheim, DE;
Dimitri Dini, Munich, DE;
Alfred Lell, Maxhütte-Haidhof, DE;
Inventors:
Assignee:
OSRAM OPTO SEMICONDUCTORS GMBH, Regensburg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/22 (2006.01); H01S 5/065 (2006.01); B82Y 20/00 (2011.01); H01S 5/10 (2006.01); H01S 5/223 (2006.01); H01S 5/227 (2006.01); H01S 5/02 (2006.01); H01S 5/028 (2006.01); H01S 5/20 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/22 (2013.01); H01S 5/2218 (2013.01); H01S 5/2219 (2013.01); H01S 5/2222 (2013.01); H01S 5/065 (2013.01); B82Y 20/00 (2013.01); H01S 5/0217 (2013.01); H01S 5/0287 (2013.01); H01S 5/1064 (2013.01); H01S 5/2022 (2013.01); H01S 5/2031 (2013.01); H01S 5/2059 (2013.01); H01S 5/2215 (2013.01); H01S 5/2231 (2013.01); H01S 5/2275 (2013.01); H01S 5/34326 (2013.01); H01S 5/34333 (2013.01); H01S 2301/166 (2013.01); H01S 2301/176 (2013.01); H01S 2301/185 (2013.01); H01S 5/101 (2013.01); H01S 5/1014 (2013.01); H01S 5/1017 (2013.01);
Abstract
A laser light source having a ridge waveguide structure includes a semi-conductor layer sequence having a number of functional layers and an active region that is suitable for generating laser light during operation. At least one of the functional layers is designed as a ridge of the ridge waveguide structure. The semiconductor layer sequence has a mode filter structure that is formed as part of the ridge and/or along a main extension plane of the functional layers next to the ridge and/or perpendicular to the main extension plane of the functional layers below the ridge.