The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2015

Filed:

Dec. 05, 2012
Applicants:

Kyoto University, Kyoto-shi, Kyoto, JP;

Hamamatsu Photonics K.k., Hamamatsu-shi, Shizuoka, JP;

Inventors:

Susumu Noda, Kyoto, JP;

Yoshitaka Kurosaka, Hamamatsu, JP;

Akiyoshi Watanabe, Hamamatsu, JP;

Kazuyoshi Hirose, Hamamatsu, JP;

Takahiro Sugiyama, Hamamatsu, JP;

Assignees:

Kyoto University, Kyoto-shi, Kyoto, JP;

HAMAMATSU PHOTONICS K.K., Hamamatsu-shi, Shizuoka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 3/00 (2006.01); H01S 5/10 (2006.01); H01S 5/40 (2006.01); H01S 5/062 (2006.01); H01S 5/12 (2006.01); H01S 5/323 (2006.01); H01S 5/042 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/105 (2013.01); H01S 5/0425 (2013.01); H01S 5/1085 (2013.01); H01S 5/4056 (2013.01); H01S 5/06243 (2013.01); H01S 5/1218 (2013.01); H01S 5/323 (2013.01); H01S 5/34313 (2013.01);
Abstract

According to a finite difference between inverse numbers of arrangement periods (a1 and a2) in first and second periodic structures, when seen in a thickness direction of a semiconductor laser element, at least two laser beams that form a predetermined angle (δθ) with respect to a lengthwise direction of a first driving electrode (E) are generated in the semiconductor laser element, one of the laser beams is set to be totally reflected in a light emission end surface, and a refractive angle (θ3) of the other laser beam is set to be less than 90 degrees.


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