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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9048445 B1

PDFFull Text
Date of Patent:
Jun. 02, 2015

Filed:

Feb. 27, 2009

Gate insulating material, gate insulating film and organic field-effect transistor

Applicants:

Seiichiro Murase, Shiga, JP;

Takenori Fujiwara, Shiga, JP;

Yukari JO, Shiga, JP;

Jun Tsukamoto, Shiga, JP;

Inventors:

Seiichiro Murase, Shiga, JP;

Takenori Fujiwara, Shiga, JP;

Yukari Jo, Shiga, JP;

Jun Tsukamoto, Shiga, JP;

Assignee:

TORAY INDUSTRIES, INC., Tokyo, JP;

Attorney:

Pillsbury Winthrop Shaw Pittman LLP

Primary Examiner:

William D Coleman

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 51/05 (2006.01); C08G 59/30 (2006.01); C08G 59/32 (2006.01); C08G 65/20 (2006.01); C08G 77/14 (2006.01); C09D 163/00 (2006.01); H01L 21/02 (2006.01); H01L 21/312 (2006.01); G03F 7/075 (2006.01); H01B 3/40 (2006.01); H01B 3/46 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 51/052 (2013.01); C08G 59/306 (2013.01); C08G 59/3281 (2013.01); C08G 65/20 (2013.01); C08G 77/14 (2013.01); C09D 163/00 (2013.01); H01L 21/02126 (2013.01); H01L 21/02216 (2013.01); H01L 21/02282 (2013.01); H01L 21/3122 (2013.01); H01L 51/0036 (2013.01); H01L 51/0068 (2013.01); H01L 51/0545 (2013.01); G03F 7/0757 (2013.01); H01B 3/40 (2013.01); H01B 3/46 (2013.01);
Abstract

To provide a gate insulating material which has high chemical resistance, is superior in coatability of a resist and an organic semiconductor coating liquid, and has small hysteresis, a gate insulating film and an FET using the same by a polysiloxane having an epoxy group-containing silane compound as a copolymerization component. A gate insulating material containing a polysiloxane having, as copolymerization components, at least a silane compound represented by the general formula (1):RSi(OR)  (1),

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