The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2015
Filed:
Aug. 21, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Jangeun Lee, Suwon-si, KR;
Sechung Oh, Suwon-si, KR;
Jeahyoung Lee, Seoul, KR;
Woojin Kim, Yongin-si, KR;
Junho Jeong, Suwon-si, KR;
Woo Chang Lim, Hwaseong-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/08 (2006.01); H01L 43/10 (2006.01); B82Y 25/00 (2011.01); H01F 10/32 (2006.01); H01L 43/02 (2006.01); H01L 27/22 (2006.01); H01F 10/12 (2006.01);
U.S. Cl.
CPC ...
H01L 43/10 (2013.01); B82Y 25/00 (2013.01); H01F 10/123 (2013.01); H01F 10/3254 (2013.01); H01F 10/3272 (2013.01); H01F 10/3286 (2013.01); H01L 43/08 (2013.01); H01L 43/02 (2013.01); H01L 27/222 (2013.01);
Abstract
A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the first vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.