The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2015
Filed:
Sep. 23, 2013
Industrial Technology Research Institute, Hsinchu, TW;
Yi-Keng Fu, Hsinchu County, TW;
Chih-Wei Hu, Taoyuan County, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A light emitting diode including a substrate, a p-type and n-type semiconductor layers, an active layer, a first and second electrodes is provided. The active layer is located between the n-type and p-type semiconductor layers, and includes i quantum wells and (i+1) quantum barrier layers, each quantum well is located between any two of the quantum barrier layers, each of k quantum wells among the i quantum wells is constituted of a light emitting layer and an auxiliary layer, in which an indium concentration of the auxiliary layer is greater than an indium concentration of the light emitting layer, where i and k are natural numbers greater than or equal to 1 and k≦i. The first electrode and second electrodes are located on the n-type semiconductor layer and the p-type semiconductor layer, respectively.