The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2015
Filed:
Dec. 23, 2013
Seoul Viosys Co., Ltd., Ansan-si, KR;
Jong Min Jang, Ansan-si, KR;
Hwa Mok Kim, Ansan-si, KR;
Kyu Ho Lee, Ansan-si, KR;
Chang Hoon Kim, Ansan-si, KR;
Daewoong Suh, Ansan-si, KR;
Chi Hyun In, Ansan-si, KP;
Dae Seok Park, Ansan-si, KR;
Jong Hyeon Chae, Ansan-si, KR;
Seoul Viosys Co., Ltd., Ansan-si, KR;
Abstract
A method of fabricating a semiconductor device, the method including: forming a first mask pattern including a masking region and an open region on a substrate; forming a sacrificial layer to cover the substrate and the first mask pattern; patterning the sacrificial layer to form a seed layer and to expose the first mask pattern; forming a second mask pattern on the exposed first mask pattern; forming an epitaxial layer on the seed layer and the second mask pattern, and forming a void between the second mask pattern and the epitaxial layer; and separating the substrate from the epitaxial layer.