The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2015
Filed:
Aug. 28, 2013
Board of Regents, the University of Texas System, Austin, TX (US);
Jack C. Lee, Austin, TX (US);
Fei Xue, Austin, TX (US);
Board of Regents, The University of Texas System, Austin, TX (US);
Abstract
A three-dimensional Gate-Wrap-Around Field-Effect Transistor (GWAFET). The GWAFET includes a substrate of III-V semiconductor material. The GWAFET further includes one or more channel layers with a gate wrapped around these one or more channel layers. Additionally, the GWAFET includes a barrier layer residing on the top channel layer with a layer of doped III-V semiconductor material residing on each end of the barrier layer. A source and drain contact are connected to the layer of doped III-V semiconductor material as well as to the multiple channels in the embodiment with the GWAFET including multiple channel layers. By having such a structure, integration density is improved. Furthermore, electrostatic control is improved due to gate coupling, which helps reduce standby power consumption. Furthermore, by using III-V semiconductor material as opposed to silicon, the current drive capacity is improved.