The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2015

Filed:

Dec. 11, 2012
Applicant:

Samsung Display Co., Ltd., Yongin, Gyeonggi-do, KR;

Inventors:

Youngjoo Choi, Anyang-si, KR;

Gwang-Bum Ko, Seongnam-si, KR;

GwonHeon Ryu, Cheonan-si, KR;

Joongeol Kim, Seoul, KR;

Do-Hyun Kim, Seongnam-si, KR;

Sang-Moon Moh, Hwaseong-si, KR;

WooGeun Lee, Yongin-si, KR;

WonHee Lee, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01); G02F 1/1343 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78693 (2013.01); H01L 29/66969 (2013.01); H01L 27/1225 (2013.01); H01L 27/124 (2013.01); H01L 27/1259 (2013.01); H01L 27/1288 (2013.01); G02F 1/134363 (2013.01);
Abstract

A thin film transistor substrate includes a substrate; a gate electrode on the substrate; a semiconductor pattern on the gate electrode; a source electrode on the semiconductor pattern; a drain electrode on the semiconductor pattern and spaced apart from the source electrode; a pixel electrode connected to the drain electrode; and a common electrode partially overlapped with the pixel electrode. The semiconductor pattern is in a same layer of the thin film transistor substrate as the pixel electrode and has an electrical property different from an electrical property of the pixel electrode.


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