The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2015

Filed:

Aug. 27, 2013
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Daisuke Tsunami, Tokyo, JP;

Koichiro Nishizawa, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76874 (2013.01);
Abstract

A method of manufacturing a semiconductor device includes the steps of immersing a substrate in a solution containing metal ions to adhere a metal catalyst to a surface of the substrate, immersing the substrate with the metal catalyst adhered thereto in an electroless plating solution to electrolessly plate a layer on the substrate, immersing the substrate in an electroplating solution to electroplate a layer on the electrolessly plated layer using the electrolessly plated layer as a power feeding layer, and forming a metal layer of Cu or Ag on the electroplated layer. The electroplated layer is formed of a different material than the metal layer.


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