The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2015
Filed:
Mar. 25, 2011
Joseph M. Wander, Chapel Hill, NC (US);
Zakaryae Fathi, Raleigh, NC (US);
Keith R. Hicks, Garner, NC (US);
Clayton R. Decamillis, Raleigh, NC (US);
Iftikhar Ahmad, Raleigh, NC (US);
Joseph M. Wander, Chapel Hill, NC (US);
Zakaryae Fathi, Raleigh, NC (US);
Keith R. Hicks, Garner, NC (US);
Clayton R. DeCamillis, Raleigh, NC (US);
Iftikhar Ahmad, Raleigh, NC (US);
Other;
Abstract
An apparatus for heating a semiconductor wafer includes: a microwave source; an applicator cavity; and, a fixture for supporting a wafer in the cavity. The fixture contains a dielectric mechanical support for the wafer and a grounded metallic ring movably positioned parallel to and concentric with the wafer at some distance from the wafer, to adjust the microwave power distribution to compensate for edge effects. A closed-loop feedback system adjusts the distance based on wafer edge and center temperatures. A method for heating a semiconductor wafer includes: a. placing the wafer in a microwave cavity; b. supporting the wafer on a fixture having a dielectric wafer support and a grounded metallic ring movably positioned at some distance from the wafer; c. introducing microwave power into the cavity to heat the wafer; and d. adjusting the distance between wafer and ring to modify the power distribution near the wafer edge.