The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2015
Filed:
Aug. 13, 2014
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
The semiconductor device of this embodiment includes: a first region of a first conductivity type SiC; a second region of a first conductivity type SiC, impurity concentration of first conductivity type of the second region being lower than impurity concentration of first conductivity type of the first region; a third region of a second conductivity type SiC provided between the first region and the second region; a Si layer provided on surfaces of the first, second, and third regions, a thickness of the Si layer on the third region being thicker than a thickness of the Si layer on the second region; a gate insulating film provided on the Si layer; and a date electrode provided on the gate insulating film.