The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2015

Filed:

Oct. 15, 2014
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventor:

Thomas Popp, Falkenstein, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/544 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
H01L 23/544 (2013.01); H01L 21/02532 (2013.01); H01L 21/0254 (2013.01); H01L 21/32051 (2013.01); H01L 29/6609 (2013.01); H01L 2223/54406 (2013.01); H01L 2223/54413 (2013.01); H01L 2223/5442 (2013.01);
Abstract

A method for manufacturing a marked single-crystalline substrate comprises providing a single-crystalline substrate comprising a first material, the single-crystalline substrate having a surface area; forming a marking structure on the surface area of the single-crystalline substrate, wherein the marking structure comprises a first semiconductor material; and depositing a semiconductor layer on the marking structure and at least partially on the surface area of the single-crystalline substrate, wherein the semiconductor layer comprises the second semiconductor material, and wherein the marking structure is buried under the second semiconductor material.


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