The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2015
Filed:
Jul. 22, 2013
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Ju-Youn Kim, Suwon-si, KR;
Jong-Mil Youn, Yongin-si, KR;
Jong-Joon Park, Hwaseong-si, KR;
Kwang-Yong Jang, Yongin-si, KR;
Jun-Sun Hwang, Suwon-si, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/518 (2013.01); H01L 27/088 (2013.01); H01L 29/78 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/66545 (2013.01); H01L 21/82345 (2013.01); H01L 21/823462 (2013.01);
Abstract
A semiconductor device includes an interlayer insulating film formed on a substrate, the insulating layer including a trench. A gate insulating layer is formed on a bottom surface of the trench and a reaction prevention layer is formed on the gate insulating layer on the bottom surface of the trench. A replacement metal gate structure is formed on the reaction prevention layer of the trench to fill the trench.