The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2015
Filed:
Nov. 04, 2010
Applicants:
Seung-ryong Lee, Gyeonggi-do, KR;
Tae-hang Ahn, Gyeonggi-do, KR;
Inventors:
Seung-Ryong Lee, Gyeonggi-do, KR;
Tae-Hang Ahn, Gyeonggi-do, KR;
Assignee:
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/732 (2006.01); H01L 29/423 (2006.01); H01L 29/165 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4236 (2013.01); H01L 29/165 (2013.01); H01L 29/78 (2013.01); H01L 29/785 (2013.01);
Abstract
A semiconductor device includes a supplementary layer and a silicon layer stacked over a substrate, a trench penetrating the supplementary layer and the silicon layer and formed over the substrate, a gate insulation layer formed along a surface of the trench, and a buried gate formed over the gate insulation layer and filling a portion of the trench.
Lee, Seung-Ryong. (2015). Semiconductor device with buried gates and method for fabricating the same (U.S. Patent No. 9048218). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9048218
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile