The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2015
Filed:
Oct. 26, 2012
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Tsung-Hsiung Lee, Taoyuan, TW;
Shang-Hui Tu, Jhubei, TW;
Gene Sheu, Taichung, TW;
Neelam Agarwal, Bangalore, IN;
Karuna Nidhi, Patna, IN;
Chia-Hao Lee, New Taipei, TW;
Rudy Octavius Sihombing, Medan, ID;
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION, Hsinchu, TW;
Abstract
A method for fabricating a semiconductor device is provided. An epitaxial layer is grown on a substrate, wherein the epitaxial layer and the substrate have a first conductivity type. A trench is formed in the epitaxial layer. A barrier region is formed at a bottom of the trench. A doped region of a second conductivity type is formed in the epitaxial layer and surrounds sidewalls of the trench, wherein the barrier region prevents a dopant used for forming the doped region from reaching the epitaxial layer under the barrier region. The trench is filled with a dielectric material. A pair of polysilicon gates is formed on the epitaxial layer and on both sides of the trench.