The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2015
Filed:
Sep. 26, 2011
Hiroomi Eguchi, Seto, JP;
Atsushi Onogi, Toyota, JP;
Takashi Okawa, Toyota, JP;
Kiyoharu Hayakawa, Obu, JP;
Hiroomi Eguchi, Seto, JP;
Atsushi Onogi, Toyota, JP;
Takashi Okawa, Toyota, JP;
Kiyoharu Hayakawa, Obu, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Abstract
A semiconductor device includes a semiconductor layer; a first type of a first semiconductor element that is arranged in a first element region of the semiconductor layer, has first and second main electrodes, and switches current; and a second type of a second semiconductor element that is arranged in a second element region of the semiconductor layer, has third and fourth main electrodes, and freewheels the current. The first and second element regions are adjacent in a direction orthogonal to a direction in which current flows, and are formed in a loop shape over the entire element region when the semiconductor layer is viewed from above. The first main electrode is electrically connected to the third main electrode, and the second main electrode is electrically connected to the fourth main electrode. When the semiconductor layer is viewed from above, a ratio of a length of the first main electrode to a length of the second main electrode is larger than a ratio of a length of the third main electrode to a length of the fourth main electrode.