The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2015
Filed:
Nov. 01, 2012
Via Technologies, Inc., New Taipei, TW;
Ke-Yuan Chen, New Taipei, TW;
Jyh-Fong Lin, New Taipei, TW;
VIA TECHNOLOGIES, INC., New Taipei, TW;
Abstract
An electrostatic discharge protection device, having a P-type semiconductor substrate set as floating; a first N-well and a second N-well formed in the P-type substrate; a first P-doped region and a second P-doped region formed in the first N-well and the second N-well, respectively. The first N-well and the first P-doped region form a first diode, and the second N-well and the second P-doped region form a second diode. A first N-doped region and a second N-doped region formed in the first N-well and the second N-well respectively. A third P-doped region is formed in the P-type substrate, wherein the third P-doped region is disposed between the first N-well and the second N-well, and the third P-doped region is electrically connected to the first N-doped region and the second P-doped region.